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Mean dynamic current versus a) Transistor Width and b) Gate Length

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Mean dynamic current versus a) Transistor Width and b) Gate Length
Power Consumption in CMOS Circuits

Power Consumption in CMOS Circuits

Reconfigurable signal modulation in a ferroelectric tunnel field-effect  transistor

Reconfigurable signal modulation in a ferroelectric tunnel field-effect transistor

Linearity Aspects of High Power Amplification in GaN Transistors

Linearity Aspects of High Power Amplification in GaN Transistors

Marc RENAUDIN, CTO, PhD, Management

Marc RENAUDIN, CTO, PhD, Management

Solved 1) A 2-input NOR gate drives a 2-input NAND gates and

Solved 1) A 2-input NOR gate drives a 2-input NAND gates and

Dynamic Power Dissipation - an overview

Dynamic Power Dissipation - an overview

a) PDP versus supply voltage and b) PDP versus Delay, simulated on

a) PDP versus supply voltage and b) PDP versus Delay, simulated on

Top-down GaN nanowire transistors with nearly zero gate hysteresis for  parallel vertical electronics

Top-down GaN nanowire transistors with nearly zero gate hysteresis for parallel vertical electronics

Gilles SICARD, Researcher, Doctor of Philosophy

Gilles SICARD, Researcher, Doctor of Philosophy

Mean dynamic current versus a) Transistor Width and b) Gate Length

Mean dynamic current versus a) Transistor Width and b) Gate Length

ASIC-System on Chip-VLSI Design: Dynamic and Internal Power

ASIC-System on Chip-VLSI Design: Dynamic and Internal Power