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Pocket implanted n-MOSFET structure with split drains.

4.8 (750) · $ 20.00 · In stock

Pocket implanted n-MOSFET structure with split drains.
6. Applications

6. Applications

Are transistors symmetrical? Are the source and drain interchangeable? -  Quora

Are transistors symmetrical? Are the source and drain interchangeable? - Quora

Pocket implanted n-MOSFET structure.

Pocket implanted n-MOSFET structure.

Planar MOSFETs and Their Application to IC Design

Planar MOSFETs and Their Application to IC Design

Micromachines, Free Full-Text

Micromachines, Free Full-Text

Figure 2 from Graded-channel MOSFET (GCMOSFET) for high performance, low  voltage DSP applications

Figure 2 from Graded-channel MOSFET (GCMOSFET) for high performance, low voltage DSP applications

Structural optimization and miniaturization for Split-Gate Trench MOSFETs  with 60 V breakdown voltage - ScienceDirect

Structural optimization and miniaturization for Split-Gate Trench MOSFETs with 60 V breakdown voltage - ScienceDirect

Split-gate-trench-technology - Infineon Technologies

Split-gate-trench-technology - Infineon Technologies

EDS

EDS

PDF) Short channel effect improved by lateral channel engineering in  deep-submicrometer MOSFETs

PDF) Short channel effect improved by lateral channel engineering in deep-submicrometer MOSFETs

Q.D.M. KHOSRU, Professor

Q.D.M. KHOSRU, Professor

Electronics, Free Full-Text

Electronics, Free Full-Text

PDF) A Semi-Analytical Drain Current Deflection Model for the

PDF) A Semi-Analytical Drain Current Deflection Model for the